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131.
W.-H. Chen 《Archiv der Mathematik》2002,79(5):396-400
Consider the class of closed Riemannian manifolds M of dimension dim(M) \geqq 3 \dim(M) \geqq 3 , Ricci curvature Ric(M) \geqq -(n - 1) \textrm{Ric}(M) \geqq -(n - 1) , diameter diam(M) < D and almost maximal volume. We show that the isomorphism types of fundamental groups characterize the diffeomorphism types of manifolds in such a class. In particular, it can be viewed as a generalization of the well-known Mostows rigidity theorem and a finiteness theorem. 相似文献
132.
Efficient measurement of the performance index (the distance of a loading parameter from the voltage collapse point) is one of the key problems in power system operations and planning and such an index indicates the severity of a power system with regard to voltage collapse. There exist many interesting methods and ideas to compute this index. However, some successful methods are not yet mathematically justified while other mathematically sound methods are often proposed directly based on the bifurcation theory and they require the initial stationary state to be too close to the unknown turning point to make the underlying methods practical.This paper first gives a survey of several popular methods for estimating the fold bifurcation point including the continuation methods, bifurcation methods and the test function methods (Seydel's direct solution methods, the tangent vector methods and the reduced Jacobian method) and discuss their relative advantages and problems. Test functions are usually based on scaling of the determinant of the Jacobian matrix and it is generally not clear how to determine the behaviour of such functions. As the underlying nonlinear equations are of a particular type, this allows us to do a new analysis of the determinants of the Jacobian and its submatrices in this paper. Following the analysis, we demonstrate how to construct a class of test functions with a predictable analytical behaviour so that a suitable index can be produced. Finally, examples of two test functions from this class are proposed. For several standard IEEE test systems, promising numerical results have been achieved. 相似文献
133.
134.
锥形透镜光纤聚焦特性研究 总被引:4,自引:2,他引:2
锥形透镜光纤(TLF)是实现光纤与平面光波光路(PLC)芯片高效耦合的核心元件。了解和掌握其聚焦特性是指导平面光波光路尾纤封装技术的关键。给出了表征锥形透镜光纤聚焦特性的两个参量出射光斑直径和远场发散角的理论分析模型,其误差小于1.14%;采用光束传播法数值模拟了锥形透镜光纤中的光波传输和模斑的演化,确定了锥形透镜光纤端面出射光斑的大小;优化锥形透镜光纤结构参量为:拉锥长度300μm,锥角0.733°,透镜曲率半径13.485μm;建立了基于数字摄像机的锥形透镜光纤出射光场测试系统,提出了物理光学反向推演法,计算出锥形透镜光纤聚焦光斑尺寸和远场发散角。理论与实验结果有着良好的一致:对于相同结构参量的锥形透镜光纤,实验反推法得到的出射光斑尺寸与理论值相比误差为3.15%,远场发散角误差为3.67%。 相似文献
135.
F. Chen L. Liu Z. Shen G.Q. Xu T.S.A. Hor 《Applied Physics A: Materials Science & Processing》2002,74(2):317-319
Free-standing and supported hydrogenated amorphous carbon films (a:C–H) were prepared upon pyrolysis of the polymer formed
by ethanolamine (EA) and citric acid (CA), under an ambient atmosphere at 300 °C. EA facilitates the formation of the macroscopic
films, while CA is essential for obtaining the a:C–H microstructure, which comprises a mixture of sp2 and sp3 carbon.
Received: 29 May 2001 / Accepted: 17 August 2001 / Published online: 20 December 2001 相似文献
136.
加肋圆柱壳在轴压作用下的屈曲和后屈曲 总被引:2,自引:2,他引:0
本文讨论完善和非完善的,纵向加肋和正交加肋圆柱壳在轴压作用下的屈曲和后屈曲性态.依据文[1]提供的圆柱薄壳屈曲的边界层理论及其分析方法,给出了加肋圆柱壳在轴压作用下的屈曲和后屈曲理论分析.本文同时讨论肋骨与壳板材料不同时对加肋圆柱壳屈曲和后屈曲性态的影响. 相似文献
137.
138.
Chunguang Du Hongyi Chen Shiqun Li 《量子光学学报》2006,12(B08):70-71
Recently, research on left-handed materials (LHMs) has attracted considerable attentions. The LHMs are a kind of metameterial which have negative permittivity and negative permeability, which lead to negative refractive index in a frequency range. The LHMs that have been available so far are in the microwave range and are usually composed of classical particles, such as split-ring resonators. Some quantum phenomena such as spontaneous emission of atoms in the LHMs which are considered to be 'classical background' have also been investigated. Many potential applications of LHMs have been proposed, such as superlenses which, in principle, can achieve arbitrary subwavelength resolution. 相似文献
139.
140.
Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献